1N4448, DO-35 ( SOD27 ), 0.15A, 0.45A, 0.3A, DO-35, 100V. Housing: DO-35 ( SOD27 ). Forward current (AV): 0.15A. Housing (JEDEC standard): -. IFSM: 0.45A. Forward current [A]: 0.3A. Housing (according to data sheet): DO-35. VRRM: 100V. Assembly/installation: PCB through-hole mounting. Cj: 4pF. Close voltage (repetitive) Vrrm [V]: 100V. Component family: Small-signal silicon diode. Configuration: PCB through-hole mounting. Ifsm [A]: 2A. Leakage current on closing Ir [A]: 25nA..5uA. MRI (max): 5uA. MRI (min): 25nA. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Semiconductor material: silicon. Spec info: Ifsm--2A, Pluse width = 1uS. Switching speed (regeneration time) tr [sec.]: 4 ns. Threshold voltage Vf (max): 1V. Trr Diode (Min.): 4 ns. [V]: 0.7V @ 5mA. Original product from manufacturer: Taiwan Semiconductor. Minimum quantity: 10. Quantity in stock updated on 14/12/2025, 01:04