1N4937, DO-41, DO-204AC, 1A, 1A, 30A, DO-41 ( DO-204AL ), 600V

1N4937, DO-41, DO-204AC, 1A, 1A, 30A, DO-41 ( DO-204AL ), 600V

Quantity
Unit price
10-49
0.0354€
50-99
0.0306€
100-199
0.0272€
200+
0.0227€
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Equivalence available
Quantity in stock: 3826
Minimum: 10

1N4937, DO-41, DO-204AC, 1A, 1A, 30A, DO-41 ( DO-204AL ), 600V. Housing: DO-41. Housing (JEDEC standard): DO-204AC. Forward current (AV): 1A. Forward current [A]: 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. Assembly/installation: PCB through-hole mounting. Cj: 15pF. Close voltage (repetitive) Vrrm [V]: 600V. Component family: Fast rectifier diode (tr<500ns). Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.3V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode type: rectifier diode. Driving current: 1A. Forward voltage Vf (min): 1.2V. Function: Fast Switching for High Efficiency. Ifsm [A]: 33A. Leakage current on closing Ir [A]: 5uA..100uA. MRI (max): 100uA. MRI (min): 5uA. Max reverse voltage: 600V. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Packaging: Ammo Pack. Properties of semiconductor: High-speed switching. Pulse current max.: 30A. Quantity per case: 1. Reaction time: 200ns, 250ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Semiconductor type: diode. Spec info: IFSM--30Ap t=8.3mS. Switching speed (regeneration time) tr [sec.]: 200 ns. Threshold voltage Vf (max): 1.2V. Threshold voltage: 1.2V, 1.3V. Trr Diode (Min.): 200 ns. [V]: 1.2V @ 1A. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 12/12/2025, 03:22

Technical documentation (PDF)
1N4937
45 parameters
Housing
DO-41
Housing (JEDEC standard)
DO-204AC
Forward current (AV)
1A
Forward current [A]
1A
IFSM
30A
Housing (according to data sheet)
DO-41 ( DO-204AL )
VRRM
600V
Assembly/installation
PCB through-hole mounting
Cj
15pF
Close voltage (repetitive) Vrrm [V]
600V
Component family
Fast rectifier diode (tr<500ns)
Conditioning
Ammo Pack
Conduction voltage (threshold voltage)
1.3V
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode type
rectifier diode
Driving current
1A
Forward voltage Vf (min)
1.2V
Function
Fast Switching for High Efficiency
Ifsm [A]
33A
Leakage current on closing Ir [A]
5uA..100uA
MRI (max)
100uA
MRI (min)
5uA
Max reverse voltage
600V
Max temperature
+150°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+150°C
Packaging
Ammo Pack
Properties of semiconductor
High-speed switching
Pulse current max.
30A
Quantity per case
1
Reaction time
200ns, 250ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Semiconductor type
diode
Spec info
IFSM--30Ap t=8.3mS
Switching speed (regeneration time) tr [sec.]
200 ns
Threshold voltage Vf (max)
1.2V
Threshold voltage
1.2V, 1.3V
Trr Diode (Min.)
200 ns
[V]
1.2V @ 1A
Original product from manufacturer
Diodes Inc
Minimum quantity
10

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