| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
1N4937, DO-41, DO-204AC, 1A, 1A, 30A, DO-41 ( DO-204AL ), 600V
| +4781 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 3826 |
1N4937, DO-41, DO-204AC, 1A, 1A, 30A, DO-41 ( DO-204AL ), 600V. Housing: DO-41. Housing (JEDEC standard): DO-204AC. Forward current (AV): 1A. Forward current [A]: 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. Assembly/installation: PCB through-hole mounting. Cj: 15pF. Close voltage (repetitive) Vrrm [V]: 600V. Component family: Fast rectifier diode (tr<500ns). Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.3V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode type: rectifier diode. Driving current: 1A. Forward voltage Vf (min): 1.2V. Function: Fast Switching for High Efficiency. Ifsm [A]: 33A. Leakage current on closing Ir [A]: 5uA..100uA. MRI (max): 100uA. MRI (min): 5uA. Max reverse voltage: 600V. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Packaging: Ammo Pack. Properties of semiconductor: High-speed switching. Pulse current max.: 30A. Quantity per case: 1. Reaction time: 200ns, 250ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Semiconductor type: diode. Spec info: IFSM--30Ap t=8.3mS. Switching speed (regeneration time) tr [sec.]: 200 ns. Threshold voltage Vf (max): 1.2V. Threshold voltage: 1.2V, 1.3V. Trr Diode (Min.): 200 ns. [V]: 1.2V @ 1A. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 12/12/2025, 03:22