1N5404, DO-27, 3A, 200A, 3A, DO-27 ( 9.2x5.2mm ), 400V

1N5404, DO-27, 3A, 200A, 3A, DO-27 ( 9.2x5.2mm ), 400V

Quantity
Unit price
10-49
0.0956€
50-99
0.0823€
100-199
0.0748€
200+
0.0638€
+1557 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 1417
Minimum: 10

1N5404, DO-27, 3A, 200A, 3A, DO-27 ( 9.2x5.2mm ), 400V. Housing: DO-27. Housing (JEDEC standard): -. Forward current (AV): 3A. IFSM: 200A. Forward current [A]: 3A. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 400V. Assembly/installation: PCB through-hole mounting. Cj: 40pF. Close voltage (repetitive) Vrrm [V]: 400V. Component family: Standard rectifier diode. Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.2V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode type: rectifier diode. Driving current: 30A. Forward voltage Vf (min): 1.1V. Ifsm [A]: 200A. Leakage current on closing Ir [A]: 10uA. Leakage current: 5uA. MRI (max): 500uA. MRI (min): 5uA. Max reverse voltage: 400V. Max temperature: +175°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+175°C. Packaging: Ammo Pack. Pulse current max.: 180A. Quantity per case: 1. Reaction time: 1.5us. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Spec info: IFSM--200Ap t=8.3ms. Switching speed (regeneration time) tr [sec.]: -. Threshold voltage Vf (max): 1.1V. Threshold voltage: 1.2V. Trr Diode (Min.): 5us. [V]: 1.2V @ 3A. Original product from manufacturer: Dc Components Co. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 14:24

Technical documentation (PDF)
1N5404
41 parameters
Housing
DO-27
Forward current (AV)
3A
IFSM
200A
Forward current [A]
3A
Housing (according to data sheet)
DO-27 ( 9.2x5.2mm )
VRRM
400V
Assembly/installation
PCB through-hole mounting
Cj
40pF
Close voltage (repetitive) Vrrm [V]
400V
Component family
Standard rectifier diode
Conditioning
Ammo Pack
Conduction voltage (threshold voltage)
1.2V
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode type
rectifier diode
Driving current
30A
Forward voltage Vf (min)
1.1V
Ifsm [A]
200A
Leakage current on closing Ir [A]
10uA
Leakage current
5uA
MRI (max)
500uA
MRI (min)
5uA
Max reverse voltage
400V
Max temperature
+175°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+175°C
Packaging
Ammo Pack
Pulse current max.
180A
Quantity per case
1
Reaction time
1.5us
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Spec info
IFSM--200Ap t=8.3ms
Threshold voltage Vf (max)
1.1V
Threshold voltage
1.2V
Trr Diode (Min.)
5us
[V]
1.2V @ 3A
Original product from manufacturer
Dc Components Co
Minimum quantity
10