1N5408, DO-27, 1000V, 3A, 3A, 200A, 3A, DO-27 ( 9.2x5.2mm ). Housing: DO-27. Housing (JEDEC standard): -. VRRM: 1000V. Forward current (AV): 3A. Average Rectified Current per Diode: 3A. IFSM: 200A. Forward current [A]: 3A. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Assembly/installation: PCB through-hole mounting. Cj: 40pF. Close voltage (repetitive) Vrrm [V]: 1 kV. Component family: Standard rectifier diode. Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.1V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 3A. Forward Voltage (Max): <1.0V / 3A. Forward voltage Vf (min): 1.1V. Ifsm [A]: 200A. Information: -. Leakage current on closing Ir [A]: 10uA. MRI (max): 500uA. MRI (min): 5uA. MSL: -. Max reverse voltage: 1kV, 1000V. Max temperature: +175°C.. Mounting Type: THT. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+175°C. Pulse current max.: 200A. Quantity per case: 1. Reverse Recovery Time (Max): 1500ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: 1N54. Spec info: IFSM--200Ap t=8.3ms. Switching speed (regeneration time) tr [sec.]: -. Threshold voltage Vf (max): 1.1V. Threshold voltage: 1.2V, 1.1V. Trr Diode (Min.): 5us. [V]: 1.2V @ 3A. Original product from manufacturer: Dc Components Co. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 14:24