BA157, DO-41, DO-204AC, 1A, 1A, 30A, DO-41 ( 5.2X2.7mm ), 400V

BA157, DO-41, DO-204AC, 1A, 1A, 30A, DO-41 ( 5.2X2.7mm ), 400V

Quantity
Unit price
10-49
0.0357€
50-99
0.0301€
100-499
0.0268€
500+
0.0221€
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Equivalence available
Quantity in stock: 553
Minimum: 10

BA157, DO-41, DO-204AC, 1A, 1A, 30A, DO-41 ( 5.2X2.7mm ), 400V. Housing: DO-41. Housing (JEDEC standard): DO-204AC. Forward current (AV): 1A. Forward current [A]: 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 400V. Assembly/installation: PCB through-hole mounting. Cj: 15pF. Close voltage (repetitive) Vrrm [V]: 400V. Component family: Fast rectifier diode (tr<500ns). Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.3V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode type: rectifier diode. Driving current: 10A. Function: High-speed switching. Ifsm [A]: 40A. Leakage current on closing Ir [A]: 5uA..100uA. Max reverse voltage: 400V. Max temperature: +175°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Properties of semiconductor: High-speed switching. Pulse current max.: 35A. Quantity per case: 1. Reaction time: 300ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Switching speed (regeneration time) tr [sec.]: 300 ns. Threshold voltage: 1.3V. Trr Diode (Min.): 150 ns. [V]: 1.3V @ 1A. Original product from manufacturer: Dc Components Co. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:05

Technical documentation (PDF)
BA157
38 parameters
Housing
DO-41
Housing (JEDEC standard)
DO-204AC
Forward current (AV)
1A
Forward current [A]
1A
IFSM
30A
Housing (according to data sheet)
DO-41 ( 5.2X2.7mm )
VRRM
400V
Assembly/installation
PCB through-hole mounting
Cj
15pF
Close voltage (repetitive) Vrrm [V]
400V
Component family
Fast rectifier diode (tr<500ns)
Conditioning
Ammo Pack
Conduction voltage (threshold voltage)
1.3V
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode type
rectifier diode
Driving current
10A
Function
High-speed switching
Ifsm [A]
40A
Leakage current on closing Ir [A]
5uA..100uA
Max reverse voltage
400V
Max temperature
+175°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+150°C
Properties of semiconductor
High-speed switching
Pulse current max.
35A
Quantity per case
1
Reaction time
300ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Switching speed (regeneration time) tr [sec.]
300 ns
Threshold voltage
1.3V
Trr Diode (Min.)
150 ns
[V]
1.3V @ 1A
Original product from manufacturer
Dc Components Co
Minimum quantity
10

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