BA159, DO-41, DO-204AC, 1A, 1A, 1A, 30A, DO-41 ( 5.2X2.7mm ), 1000V

BA159, DO-41, DO-204AC, 1A, 1A, 1A, 30A, DO-41 ( 5.2X2.7mm ), 1000V

Quantity
Unit price
10-49
0.0361€
50-99
0.0303€
100-499
0.0270€
500+
0.0227€
+17580 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 2468
Minimum: 10

BA159, DO-41, DO-204AC, 1A, 1A, 1A, 30A, DO-41 ( 5.2X2.7mm ), 1000V. Housing: DO-41. Housing (JEDEC standard): DO-204AC. Average Rectified Current per Diode: 1A. Forward current (AV): 1A. Forward current [A]: 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Cj: 15pF. Close voltage (repetitive) Vrrm [V]: 1 kV. Component family: Fast rectifier diode (tr<500ns). Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.3V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 1A. Forward Voltage (Max): <1.3V / 1A. Forward voltage Vf (min): 1.3V. Function: High-speed switching. Ifsm [A]: 40A. Information: -. Leakage current on closing Ir [A]: 5uA..100uA. MSL: -. Max reverse voltage: 1000V. Max temperature: +175°C.. Mounting Type: THT. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Properties of semiconductor: High-speed switching. Pulse current max.: 30A. Quantity per case: 1. Reaction time: 500ns. Reverse Leakage Current: <5uA / 1000V. Reverse Recovery Time (Max): 300ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: BA. Switching speed (regeneration time) tr [sec.]: 300 ns. Threshold voltage Vf (max): 1.3V. Threshold voltage: 1.5V, 1.3V. Trr Diode (Min.): 500 ns. [V]: 1.3V @ 1A. Original product from manufacturer: Dc Components Co. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:05

Technical documentation (PDF)
BA159
47 parameters
Housing
DO-41
Housing (JEDEC standard)
DO-204AC
Average Rectified Current per Diode
1A
Forward current (AV)
1A
Forward current [A]
1A
IFSM
30A
Housing (according to data sheet)
DO-41 ( 5.2X2.7mm )
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Cj
15pF
Close voltage (repetitive) Vrrm [V]
1 kV
Component family
Fast rectifier diode (tr<500ns)
Conditioning
Ammo Pack
Conduction voltage (threshold voltage)
1.3V
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
rectifier diode
Driving current
1A
Forward Voltage (Max)
<1.3V / 1A
Forward voltage Vf (min)
1.3V
Function
High-speed switching
Ifsm [A]
40A
Leakage current on closing Ir [A]
5uA..100uA
Max reverse voltage
1000V
Max temperature
+175°C.
Mounting Type
THT
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+150°C
Properties of semiconductor
High-speed switching
Pulse current max.
30A
Quantity per case
1
Reaction time
500ns
Reverse Leakage Current
<5uA / 1000V
Reverse Recovery Time (Max)
300ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Series
BA
Switching speed (regeneration time) tr [sec.]
300 ns
Threshold voltage Vf (max)
1.3V
Threshold voltage
1.5V, 1.3V
Trr Diode (Min.)
500 ns
[V]
1.3V @ 1A
Original product from manufacturer
Dc Components Co
Minimum quantity
10