BAS16LT-1, 200mA, 500mA, SOT-23 ( TO-236 ), 318–08, SOT–23 (TO–236AB), 75V

BAS16LT-1, 200mA, 500mA, SOT-23 ( TO-236 ), 318–08, SOT–23 (TO–236AB), 75V

Quantity
Unit price
10-49
0.0311€
50-99
0.0280€
100+
0.0250€
Equivalence available
Quantity in stock: 2396
Minimum: 10

BAS16LT-1, 200mA, 500mA, SOT-23 ( TO-236 ), 318–08, SOT–23 (TO–236AB), 75V. Forward current (AV): 200mA. IFSM: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): 318–08, SOT–23 (TO–236AB). VRRM: 75V. Assembly/installation: surface-mounted component (SMD). Cj: 2pF. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 715mV. Function: switching diode. MRI (max): 50uA. MRI (min): 1uA. Marking on the case: A6s. Note: screen printing/SMD code A6s, A6t. Number of terminals: 3. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Threshold voltage Vf (max): 1.25V. Trr Diode (Min.): 6 ns. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:01

Technical documentation (PDF)
BAS16LT-1
22 parameters
Forward current (AV)
200mA
IFSM
500mA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
318–08, SOT–23 (TO–236AB)
VRRM
75V
Assembly/installation
surface-mounted component (SMD)
Cj
2pF
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
715mV
Function
switching diode
MRI (max)
50uA
MRI (min)
1uA
Marking on the case
A6s
Note
screen printing/SMD code A6s, A6t
Number of terminals
3
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Threshold voltage Vf (max)
1.25V
Trr Diode (Min.)
6 ns
Original product from manufacturer
ON Semiconductor
Minimum quantity
10

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