BY399, DO-27, 800V, 3A, 3A, 3A, 200A, DO-27 ( 9.5x5.6mm )

BY399, DO-27, 800V, 3A, 3A, 3A, 200A, DO-27 ( 9.5x5.6mm )

Quantity
Unit price
5-49
0.11€
50-99
0.0956€
100-199
0.0866€
200+
0.0704€
+3723 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 436
Minimum: 5

BY399, DO-27, 800V, 3A, 3A, 3A, 200A, DO-27 ( 9.5x5.6mm ). Housing: DO-27. Housing (JEDEC standard): -. VRRM: 800V. Average Rectified Current per Diode: 3A. Forward current (AV): 3A. Forward current [A]: 3A. IFSM: 200A. Housing (according to data sheet): DO-27 ( 9.5x5.6mm ). Assembly/installation: PCB through-hole mounting. Cj: 65pF. Close voltage (repetitive) Vrrm [V]: 800V. Component family: Fast rectifier diode (tr<500ns). Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.3V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 3A. Forward Voltage (Max): <1.2V / 3A. Forward voltage Vf (min): 1.3V. Function: High-speed switching. Ifsm [A]: 110A. Information: -. Leakage current on closing Ir [A]: 5uA. MRI (max): 150uA. MRI (min): 10uA. MSL: -. Max reverse voltage: 800V. Max temperature: +175°C.. Mounting Type: THT. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Packaging: Ammo Pack. Properties of semiconductor: High-speed switching. Pulse current max.: 100A. Quantity per case: 1. Reaction time: 500ns. Reverse Recovery Time (Max): 500ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: BY399. Spec info: 200Ap. Switching speed (regeneration time) tr [sec.]: 500 ns. Threshold voltage Vf (max): 1.3V. Threshold voltage: 1.3V, 1.25V. Trr Diode (Min.): 500 ns. [V]: 1.2V @ 3A. Original product from manufacturer: Dc Components Co. Minimum quantity: 5. Quantity in stock updated on 13/11/2025, 14:24

Technical documentation (PDF)
BY399
49 parameters
Housing
DO-27
VRRM
800V
Average Rectified Current per Diode
3A
Forward current (AV)
3A
Forward current [A]
3A
IFSM
200A
Housing (according to data sheet)
DO-27 ( 9.5x5.6mm )
Assembly/installation
PCB through-hole mounting
Cj
65pF
Close voltage (repetitive) Vrrm [V]
800V
Component family
Fast rectifier diode (tr<500ns)
Conditioning
Ammo Pack
Conduction voltage (threshold voltage)
1.3V
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
rectifier diode
Driving current
3A
Forward Voltage (Max)
<1.2V / 3A
Forward voltage Vf (min)
1.3V
Function
High-speed switching
Ifsm [A]
110A
Leakage current on closing Ir [A]
5uA
MRI (max)
150uA
MRI (min)
10uA
Max reverse voltage
800V
Max temperature
+175°C.
Mounting Type
THT
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+150°C
Packaging
Ammo Pack
Properties of semiconductor
High-speed switching
Pulse current max.
100A
Quantity per case
1
Reaction time
500ns
Reverse Recovery Time (Max)
500ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Series
BY399
Spec info
200Ap
Switching speed (regeneration time) tr [sec.]
500 ns
Threshold voltage Vf (max)
1.3V
Threshold voltage
1.3V, 1.25V
Trr Diode (Min.)
500 ns
[V]
1.2V @ 3A
Original product from manufacturer
Dc Components Co
Minimum quantity
5