IGBT transistor IGW60T120. Assembly/installation: PCB through-hole mounting. C(in): 3700pF. CE diode: no. Channel type: N. Collector current Ic [A]: 60A. Collector current: 100A. Collector peak current Ip [A]: 150A. Collector-emitter voltage Uce [V]: 1.2 kV. Collector/emitter voltage Vceo: 1200V. Component family: IGBT transistor. Configuration: PCB through-hole mounting. Cost): 180pF. Gate breakdown voltage Ugs [V]: 6.5V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (JEDEC standard): -. Housing (according to data sheet): PG-TO-247-3. Housing: TO-247. Ic(T=100°C): 60A. Ic(pulse): 150A. Manufacturer's marking: G60T120. Marking on the case: G60T120. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 375W. Maximum saturation voltage VCE(sat): 2.4V. Number of terminals: 3. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 375W. RoHS: yes. Saturation voltage VCE(sat): 1.9V. Switch-off delay tf[nsec.]: 480 ns. Switch-on time ton [nsec.]: 50 ns. Td(off): 480 ns. Td(on): 50 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 13/11/2025, 01:35