N-channel transistor BSS123-ONS, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 170mA. Idss (max): 46.4k Ohms. On-resistance Rds On: 6 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 20pF. Channel type: N. Cost): 9pF. Drain-source protection: yes. Equivalents: BSS123-7-F. Function: screen printing/SMD code SA. G-S Protection: no. Gate/source voltage (off) max.: 2.6V. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 680mA. Marking on the case: SA. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 225mW. Quantity per case: 1. RoHS: yes. Td(off): 40 ns. Td(on): 20 ns. Technology: Field Effect Transistor Logic Level Enhancement Mode. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Vgs(th) min.: 1.6V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 13:31