N-channel transistor CM200DY-24H, 200A, other, other, 1200V. Ic(T=100°C): 200A. Housing: other. Housing (according to data sheet): other. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 40pF. CE diode: no. Channel type: N. Collector current: 200A. Cost): 14pF. Dimensions: 108x62x31mm. Function: Dual IGBT transistor (Isolated). Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 400A. Number of terminals: 7. Operating temperature: -40...+125°C. Pd (Power Dissipation, Max): 1500W. RoHS: yes. Saturation voltage VCE(sat): 2.5V. Spec info: High Power Switching. Td(off): 300 ns. Td(on): 250 ns. Original product from manufacturer: Mitsubishi Electric Semiconductor. Quantity in stock updated on 13/11/2025, 03:27