N-channel transistor IRF2807PBF, 75V, 0.013 Ohms, 75V

N-channel transistor IRF2807PBF, 75V, 0.013 Ohms, 75V

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Quantity in stock: 133

N-channel transistor IRF2807PBF, 75V, 0.013 Ohms, 75V. Drain-source voltage (Vds): 75V. Housing (JEDEC standard): -. On-resistance Rds On: 0.013 Ohms. Drain-source voltage Uds [V]: 75V. Channel type: N. Ciss Gate Capacitance [pF]: 3820pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 82A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ 43A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF2807PBF. Max drain current: 82A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 230W. Number of terminals: 3. Power: 200W. RoHS: yes. Switch-off delay tf[nsec.]: 49 ns. Switch-on time ton [nsec.]: 13 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 12/11/2025, 21:22

Technical documentation (PDF)
IRF2807PBF
21 parameters
Drain-source voltage (Vds)
75V
On-resistance Rds On
0.013 Ohms
Drain-source voltage Uds [V]
75V
Channel type
N
Ciss Gate Capacitance [pF]
3820pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
82A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.013 Ohms @ 43A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRF2807PBF
Max drain current
82A
Max temperature
+175°C.
Maximum dissipation Ptot [W]
230W
Number of terminals
3
Power
200W
RoHS
yes
Switch-off delay tf[nsec.]
49 ns
Switch-on time ton [nsec.]
13 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
International Rectifier