N-channel transistor IRF3710PBF, TO220, 100V, 100V. Housing: TO220. Vdss (Drain to Source Voltage): 100V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Assembly/installation: THT. Charge: 86.7nC. Ciss Gate Capacitance [pF]: 3130pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 57A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 28A. Drain current: 57A. Drain-source voltage: 100V. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate-source voltage: ±20V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 57A. Information: -. MSL: -. Manufacturer's marking: IRF3710PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 200W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Polarity: unipolar. Power: 200W. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 45 ns. Switch-on time ton [nsec.]: 12 ns. Technology: HEXFET®. Type of transistor: N-MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 12/11/2025, 21:42