N-channel transistor IRFR220, TO252AA, DPAK. Housing: TO252AA, DPAK. Assembly/installation: SMD. Charge: 15nC. Drain current: 5A. Drain-source voltage: 200V. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 3.5K/W. Polarity: unipolar. Power: 43W. RoHS: yes. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 13/11/2025, 04:39