N-channel transistor IRLZ34N, TO-220, 21A, 30A, 250uA, 0.035 Ohms, TO-220AB, 55V. Housing: TO-220. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.035 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 880pF. Channel type: N. Charge: 16.7nC. Conditioning: tubus. Cost): 220pF. Drain current: 27A. Drain-source protection: yes. Drain-source voltage: 55V. Function: Gate control by logic level. G-S Protection: no. Gate-source voltage: 16V, ±16V. Gate/source voltage Vgs: 16V. Housing thermal resistance: 2.7K/W. IDss (min): 25uA. Id(imp): 110A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 68W. Polarity: unipolar. Power: 56W. Properties of semiconductor: Logic Level. Quantity per case: 1. RoHS: yes. Td(off): 21 ns. Td(on): 8.9 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 12/11/2025, 19:38