N-channel transistor MDF9N50TH, 5.5A, 9A, 9A, 0.72 Ohms, TO-220FP, TO-220F, 500V

N-channel transistor MDF9N50TH, 5.5A, 9A, 9A, 0.72 Ohms, TO-220FP, TO-220F, 500V

Quantity
Unit price
1-4
2.10€
5-24
1.73€
25-49
1.55€
50+
1.45€
Quantity in stock: 47

N-channel transistor MDF9N50TH, 5.5A, 9A, 9A, 0.72 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 5.5A. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.72 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 780pF. Channel type: N. Cost): 100pF. Drain-source protection: diode. Function: Fast switch, Low gate charge 28nC, Low Crss 24pF. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 36A. Number of terminals: 3. Operating temperature: +55...+150°C. Pd (Power Dissipation, Max): 38W. Quantity per case: 1. RoHS: yes. Td(off): 38 ns. Td(on): 18 ns. Technology: DMOS, QFET. Trr Diode (Min.): 272 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Magnachip Semiconductor. Quantity in stock updated on 13/11/2025, 07:30

Technical documentation (PDF)
MDF9N50TH
30 parameters
ID (T=100°C)
5.5A
ID (T=25°C)
9A
Idss (max)
9A
On-resistance Rds On
0.72 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
780pF
Channel type
N
Cost)
100pF
Drain-source protection
diode
Function
Fast switch, Low gate charge 28nC, Low Crss 24pF
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
36A
Number of terminals
3
Operating temperature
+55...+150°C
Pd (Power Dissipation, Max)
38W
Quantity per case
1
RoHS
yes
Td(off)
38 ns
Td(on)
18 ns
Technology
DMOS, QFET
Trr Diode (Min.)
272 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Magnachip Semiconductor