NPN-Transistor 2N5401, TO-92, TO-226AA, 160V, 600mA, 0.6A, TO-92, 150V. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Collector current: 0.6A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 600mA. Component family: PNP transistor. Conditioning: Ammo Pack. Configuration: PCB through-hole mounting. Cost): 6pF. Cutoff frequency ft [MHz]: 100 MHz. FT: 100 MHz. Frequency: 400MHz. Gain hfe: 240. Manufacturer's marking: 2N5401. Max hFE gain: 240. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Minimum hFE gain: 50. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Spec info: 2N5401. Type of transistor: PNP. Vcbo: 160V. Vebo: 5V. Voltage (collector - emitter): 150V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 01:37