NPN transistor 2N5551, TO-92, 600mA, 0.6A, TO-92, 160V. Housing: TO-92. Collector current Ic [A], max.: 600mA. Collector current: 0.6A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 160V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 600mA. Collector-emitter voltage Uceo [V]: 160V. Component family: NPN transistor. Conditioning: Ammo Pack. Configuration: PCB through-hole mounting. Cost): 6pF. Cutoff frequency ft [MHz]: 100 MHz. FT: 100 MHz. Frequency: 100MHz. Function: VIDEO amp.. Housing (JEDEC standard): TO-226AA. Manufacturer's marking: 2N5551. Max hFE gain: 250. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Maximum saturation voltage VCE(sat): 0.2V. Minimum hFE gain: 80. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Packaging: Ammo Pack. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.15V. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 180V. Vebo: 6V. Voltage (collector - emitter): 160V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 01:37