NPN-Transistor 2N6520, -350V, 0.5A, TO-92, TO-92, 350V. Collector-Emitter Voltage VCEO: -350V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 100pF. CE diode: no. Cost): 6pF. FT: 200 MHz. Function: -. Max frequency: 40MHz. Max hFE gain: 200. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 15. Pd (Power Dissipation, Max): 0.625W. Polarity: PNP. Power: 0.63W. Quantity per case: 1. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2N6517. Type of transistor: PNP. Vcbo: 350V. Vebo: 5V. Original product from manufacturer: Cdil. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 01:37