NPN transistor 2SC5148, 8A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V

NPN transistor 2SC5148, 8A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V

Quantity
Unit price
1-4
4.50€
5-24
4.06€
25-49
3.72€
50+
3.55€
Quantity in stock: 22

NPN transistor 2SC5148, 8A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. FT: 2 MHz. Function: Horizontal Deflection Output, high speed Switch. Ic(pulse): 16A. Max hFE gain: 25. Minimum hFE gain: 8. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. Saturation voltage VCE(sat): 5V. Semiconductor material: silicon. Technology: 'Triple Diffused MESA Type'. Temperature: +150°C. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 13/11/2025, 12:12

Technical documentation (PDF)
2SC5148
23 parameters
Collector current
8A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
2-16E3A
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
FT
2 MHz
Function
Horizontal Deflection Output, high speed Switch
Ic(pulse)
16A
Max hFE gain
25
Minimum hFE gain
8
Number of terminals
3
Pd (Power Dissipation, Max)
50W
Quantity per case
1
Saturation voltage VCE(sat)
5V
Semiconductor material
silicon
Technology
'Triple Diffused MESA Type'
Temperature
+150°C
Tf(max)
0.3us
Tf(min)
0.15us
Type of transistor
NPN
Vcbo
1500V
Vebo
5V
Original product from manufacturer
Toshiba