NPN transistor 2SD1207, TO-92, 2A, TO-92MOD ( 2-5J1A ), 50V

NPN transistor 2SD1207, TO-92, 2A, TO-92MOD ( 2-5J1A ), 50V

Quantity
Unit price
1-4
0.81€
5-9
0.67€
10-24
0.58€
25-49
0.53€
50+
0.45€
Quantity in stock: 17

NPN transistor 2SD1207, TO-92, 2A, TO-92MOD ( 2-5J1A ), 50V. Housing: TO-92. Collector current: 2A. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 12pF. FT: 150 MHz. Function: -. Ic(pulse): 4A. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.15V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SB892. Technology: 'Epitaxial Planar Silicon Darlington Transistor'. Type of transistor: NPN. Vcbo: 60V. Vebo: 6V. Original product from manufacturer: Sanyo. Quantity in stock updated on 13/11/2025, 12:12

Technical documentation (PDF)
2SD1207
24 parameters
Housing
TO-92
Collector current
2A
Housing (according to data sheet)
TO-92MOD ( 2-5J1A )
Collector/emitter voltage Vceo
50V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
12pF
FT
150 MHz
Ic(pulse)
4A
Max hFE gain
400
Minimum hFE gain
200
Number of terminals
3
Pd (Power Dissipation, Max)
1W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.15V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SB892
Technology
'Epitaxial Planar Silicon Darlington Transistor'
Type of transistor
NPN
Vcbo
60V
Vebo
6V
Original product from manufacturer
Sanyo