NPN-Transistor BC212B, -50V, 100mA, TO-92, TO-92, 50V. Collector-Emitter Voltage VCEO: -50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Darlington transistor?: no. FT: 280 MHz. Max frequency: 280MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 350mW. Polarity: PNP. Power: 1W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.1V. Semiconductor material: silicon. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 60V. Vebo: 5V. Original product from manufacturer: Cdil. Minimum quantity: 10. Quantity in stock updated on 31/10/2025, 08:56