NPN transistor BC547C, TO-92, 100mA, 100mA, TO-92, 45V

NPN transistor BC547C, TO-92, 100mA, 100mA, TO-92, 45V

Quantity
Unit price
10-49
0.0574€
50-99
0.0499€
100-499
0.0449€
500+
0.0386€
+6048 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 2147
Minimum: 10

NPN transistor BC547C, TO-92, 100mA, 100mA, TO-92, 45V. Housing: TO-92. Collector current Ic [A], max.: 100mA. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector-emitter voltage Uceo [V]: 45V. Component family: NPN transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 300 MHz. FT: 300 MHz. Function: general purpose. Housing (JEDEC standard): TO-226. Ic(pulse): 200mA. Manufacturer's marking: BC547C. Max hFE gain: 800. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Minimum hFE gain: 270. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BC557C. Technology: 'Epitaxial Planar-Transistor'. Type of transistor: NPN. Vcbo: 50V. Vebo: 5V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34

Technical documentation (PDF)
BC547C
36 parameters
Housing
TO-92
Collector current Ic [A], max.
100mA
Collector current
100mA
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
45V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector-emitter voltage Uceo [V]
45V
Component family
NPN transistor
Configuration
PCB through-hole mounting
Cutoff frequency ft [MHz]
300 MHz
FT
300 MHz
Function
general purpose
Housing (JEDEC standard)
TO-226
Ic(pulse)
200mA
Manufacturer's marking
BC547C
Max hFE gain
800
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.5W
Minimum hFE gain
270
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.2V
Semiconductor material
silicon
Spec info
complementary transistor (pair) BC557C
Technology
'Epitaxial Planar-Transistor'
Type of transistor
NPN
Vcbo
50V
Vebo
5V
Original product from manufacturer
Diotec Semiconductor
Minimum quantity
10