NPN-Transistor BC556C, 100mA, TO-92, TO-92, 80V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. FT: 150 MHz. Ic(pulse): 200mA. Max hFE gain: 800. Minimum hFE gain: 420. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BC546C. Technology: 'Epitaxial Planar Transistor'. Temperature: +150°C. Type of transistor: PNP. Vcbo: 80V. Vebo: 5V. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34