NPN-Transistor BCW30, 0.1A, 32V

NPN-Transistor BCW30, 0.1A, 32V

Quantity
Unit price
10-49
0.0690€
50-99
0.0502€
100-199
0.0354€
200+
0.0212€
Quantity in stock: 471
Minimum: 10

NPN-Transistor BCW30, 0.1A, 32V. Collector current: 0.1A. Collector/emitter voltage Vceo: 32V. FT: 150 MHz. Function: -. Marking on the case: C2. Max hFE gain: 500. Maximum saturation voltage VCE(sat): 0.3V. Minimum hFE gain: 250. Note: screen printing/SMD code C2. Pd (Power Dissipation, Max): 300mW. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: PNP. Vcbo: 32V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34

BCW30
16 parameters
Collector current
0.1A
Collector/emitter voltage Vceo
32V
FT
150 MHz
Marking on the case
C2
Max hFE gain
500
Maximum saturation voltage VCE(sat)
0.3V
Minimum hFE gain
250
Note
screen printing/SMD code C2
Pd (Power Dissipation, Max)
300mW
Quantity per case
1
Semiconductor material
silicon
Type of transistor
PNP
Vcbo
32V
Vebo
5V
Original product from manufacturer
ON Semiconductor
Minimum quantity
10