NPN transistor BUB323ZG, 10A, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 350V

NPN transistor BUB323ZG, 10A, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 350V

Quantity
Unit price
1-4
5.37€
5-24
4.75€
25-49
4.21€
50+
3.93€
Quantity in stock: 6

NPN transistor BUB323ZG, 10A, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 350V. Collector current: 10A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Collector/emitter voltage Vceo: 350V. Assembly/installation: surface-mounted component (SMD). Darlington transistor?: yes. Function: fall time 625ns. Max hFE gain: 3400. Minimum hFE gain: 500. Quantity per case: 1. Semiconductor material: silicon. Spec info: 360-450V Clamping. Type of transistor: NPN. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 13/11/2025, 12:31

Technical documentation (PDF)
BUB323ZG
14 parameters
Collector current
10A
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-263 )
Collector/emitter voltage Vceo
350V
Assembly/installation
surface-mounted component (SMD)
Darlington transistor?
yes
Function
fall time 625ns
Max hFE gain
3400
Minimum hFE gain
500
Quantity per case
1
Semiconductor material
silicon
Spec info
360-450V Clamping
Type of transistor
NPN
Original product from manufacturer
ON Semiconductor