NPN-Transistor MJE350-ONS, 0.5A, TO-126 (TO-225, SOT-32), TO-225, 300V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 7pF. CE diode: no. Cost): 110pF. Equivalents: KSE350. FT: 10 MHz. Function: -. Max hFE gain: 240. Minimum hFE gain: 30. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 20.8W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE340. Type of transistor: PNP. Vebo: 3V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 31/10/2025, 09:27