NPN-Transistor MMBT3906LT1G, SOT-23 ( TO-236 ), TO-236, 40V, 200mA, 200mA, SOT-23 ( TO236 ), 40V. Housing: SOT-23 ( TO-236 ). Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Collector current: 200mA. Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Collector current Ic [A]: 0.2A. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Cost): 1.6pF. Cutoff frequency ft [MHz]: 250 MHz. FT: 250 MHz. Frequency: 250MHz. Function: UNI. Ic(pulse): 800mA. Manufacturer's marking: 2A. Marking on the case: 2A. Max hFE gain: 300. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.225W. Minimum hFE gain: 100. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 225mW. Polarity: bipolar. Power: 300mW. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.25V. Semiconductor material: silicon. Spec info: SMD 2A. Tf(max): 75 ns. Tf(min): 35 ns. Type of transistor: PNP. Vcbo: 40V. Vebo: 5V. Voltage (collector - emitter): 40V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:37