P-channel transistor IRFR9014, 5.1A, 500uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V

P-channel transistor IRFR9014, 5.1A, 500uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V

Quantity
Unit price
1-4
1.01€
5-24
0.83€
25-49
0.70€
50+
0.63€
Quantity in stock: 35

P-channel transistor IRFR9014, 5.1A, 500uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 5.1A. Idss (max): 500uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 270pF. Channel type: P. Cost): 170pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 3.2A. IDss (min): 100uA. Id(imp): 20A. Number of terminals: 2. On-resistance Rds On: 0.50 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. RoHS: yes. Td(off): 9.6 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 80 ns. Type of transistor: FET. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 13/11/2025, 02:45

Technical documentation (PDF)
IRFR9014
29 parameters
ID (T=25°C)
5.1A
Idss (max)
500uA
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
270pF
Channel type
P
Cost)
170pF
Drain-source protection
zener diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
3.2A
IDss (min)
100uA
Id(imp)
20A
Number of terminals
2
On-resistance Rds On
0.50 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
25W
Quantity per case
1
RoHS
yes
Td(off)
9.6 ns
Td(on)
11 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
80 ns
Type of transistor
FET
Vgs(th) min.
2V
Original product from manufacturer
Vishay