P-channel transistor IRFR9120N, 6.6A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V

P-channel transistor IRFR9120N, 6.6A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V

Quantity
Unit price
1-4
1.13€
5-24
0.96€
25-49
0.85€
50-99
0.77€
100+
0.66€
Quantity in stock: 107

P-channel transistor IRFR9120N, 6.6A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=25°C): 6.6A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 350pF. Channel type: P. Cost): 110pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 4.2A. IDss (min): 25uA. Id(imp): 26A. Number of terminals: 2. On-resistance Rds On: 0.48 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. RoHS: yes. Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 13/11/2025, 02:45

Technical documentation (PDF)
IRFR9120N
30 parameters
ID (T=25°C)
6.6A
Idss (max)
250uA
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
100V
Assembly/installation
surface-mounted component (SMD)
C(in)
350pF
Channel type
P
Cost)
110pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
4.2A
IDss (min)
25uA
Id(imp)
26A
Number of terminals
2
On-resistance Rds On
0.48 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
40W
Quantity per case
1
RoHS
yes
Td(off)
28 ns
Td(on)
14 ns
Technology
HEXFET® Power MOSFET
Trr Diode (Min.)
100 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier