TLP185-GB-SE-T. Assembly/installation: surface-mounted component (SMD). CTR: 100...400 %. Collector current: 50mA. Collector/emitter voltage Vceo: 80V. Courant IF Diode (peak): 1A. Diode IF: 50mA. Diode threshold voltage: 1.25V. Function: GaAs Ired & Photo-Transistor. Housing (according to data sheet): 11-4M1S. Housing: SO. Ic(pulse): 1A. Marking on the case: P185GB. Number of terminals: 4. Operating temperature: -55...+100°C. Output: transistor output. Pd (Power Dissipation, Max): 150mW. RoHS: yes. Saturation voltage VCE(sat): 0.2V. Tf (type): 9us. Tr: 5us. VECO: 7V. VRRM: 3750V. Original product from manufacturer: Toshiba. Quantity in stock updated on 13/11/2025, 15:50